N-channel MOSFET, 20V Drain-Source Voltage (Vdss), 25.8A Continuous Drain Current (ID), and 2.5mR maximum Drain-Source On-Resistance (Rds On Max). Features a 32ns fall time and 68ns turn-off delay time, with a 37ns turn-on delay time. This surface mount component operates within a -55°C to 150°C temperature range and offers 6W maximum power dissipation. Packaged in an 8-SOIC case, it is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI4158DY-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI4158DY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 25.8A |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.55mm |
| Input Capacitance | 5.71nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 37ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4158DY-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
