N-channel MOSFET, 30V drain-source voltage, 25.4A continuous drain current, and 5.1mΩ drain-source resistance. Features a 12ns fall time, 28ns turn-off delay, and 25ns turn-on delay. Operates with a nominal gate-source voltage of 1V and a maximum gate-source voltage of 20V. Packaged in an 8-SOIC surface-mount case, this RoHS compliant component offers a maximum power dissipation of 5.7W and an operating temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4160DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 25.4A |
| Drain to Source Resistance | 5.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.071nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.7W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4160DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4160DY-T1-GE3 to view detailed technical specifications.
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