Single N-Channel Power MOSFET, SOIC-8 package, featuring 30V drain-source voltage and a maximum on-resistance of 7.9mR at 10Vgs. This surface mount device offers a continuous drain current of 19.3A and a low threshold voltage of 1V. Designed for efficient switching, it exhibits typical turn-on delay of 20ns and fall time of 10ns. With a maximum power dissipation of 5W and an operating temperature range of -55°C to 150°C, it is RoHS compliant and packaged in tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4162DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
19.3A
Drain to Source Resistance
8.2mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
7.9mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.155nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
7.9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
25ns
Turn-On Delay Time
20ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4162DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4162DY-T1-GE3 to view detailed technical specifications.
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