N-channel, silicon, surface-mount field-effect transistor with a 30V drain-source voltage and 30A continuous drain current. Features a low 3.2mΩ drain-to-source on-resistance and 3.545nF input capacitance. Operates across a -55°C to 150°C temperature range with a 3W power dissipation. Includes 16ns fall time and 35ns turn-on delay time.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Vishay SI4164DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
30A
Drain to Source Resistance
3.2mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3.2MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
3.545nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
3.2mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
48ns
Turn-On Delay Time
35ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4164DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4164DY-T1-GE3 to view detailed technical specifications.
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