N-channel enhancement mode power MOSFET in an 8-pin SOIC N package. Features a 30V drain-source voltage, 30A continuous drain current, and 3.5mOhm maximum drain-source resistance at 10V. Offers typical gate charge of 29nC at 4.5V and 65nC at 10V, with typical input capacitance of 4355pF at 15V. Surface-mount device with gull-wing leads, measuring 5mm x 4mm x 1.55mm.
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Vishay SI4170DY-T1-GE3 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOIC N |
| Package Description | Small Outline IC Narrow Body |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4(Max) |
| Package Height (mm) | 1.55(Max) |
| Seated Plane Height (mm) | 1.75(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 30A |
| Maximum Drain Source Resistance | 3.5@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|65@10VnC |
| Typical Gate Charge @ 10V | 65nC |
| Typical Input Capacitance @ Vds | 4355@15VpF |
| Maximum Power Dissipation | 3000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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