N-CHANNEL MOSFET, 30V Vdss, 15A Continuous Drain Current, 12mR Max Drain-Source On Resistance. Features 4.5W Max Power Dissipation, 8ns Turn-On Delay, 8ns Fall Time, and 16ns Turn-Off Delay. Operates from -55°C to 150°C, with 820pF Input Capacitance. Surface mountable in a SO package, this component is RoHS compliant and lead-free.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4172DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
15A
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
12mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
820pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
12mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
16ns
Turn-On Delay Time
8ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4172DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4172DY-T1-GE3 to view detailed technical specifications.
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