N-Channel Silicon MOSFET for small signal applications, featuring a 30V drain-source voltage (Vdss) and 17A continuous drain current (ID). This surface-mount device offers a low drain-source on-resistance (Rds On) of 9.5mR, with a threshold voltage of 1V. It operates across a wide temperature range from -55°C to 150°C and boasts fast switching times with a turn-on delay of 14ns and fall time of 9ns. Packaged in a compact SOP-8 (SO) case, this component is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4174DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
17A
Drain to Source Resistance
10.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
9.5MR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
985pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
9.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
19ns
Turn-On Delay Time
14ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4174DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4174DY-T1-GE3 to view detailed technical specifications.
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