N-Channel Silicon JFET, 2-Element, Surface Mount, SOP-8 package. Features 20V Drain to Source Voltage (Vdss), 19.8A Continuous Drain Current (ID), and 3.8mR Drain to Source Resistance. Operates from -55°C to 150°C with a 3.25W Max Power Dissipation. Includes 1V Threshold Voltage and 2.11nF Input Capacitance. RoHS Compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4204DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
19.8A
Drain to Source Resistance
3.8mR
Drain to Source Voltage (Vdss)
20V
Fall Time
13ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.11nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.25W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.6mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
26ns
Turn-On Delay Time
18ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI4204DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4204DY-T1-GE3 to view detailed technical specifications.
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