N-Channel Silicon JFET, 2-Element, Surface Mount, SOP-8 package. Features 20V Drain to Source Voltage (Vdss), 19.8A Continuous Drain Current (ID), and 3.8mR Drain to Source Resistance. Operates from -55°C to 150°C with a 3.25W Max Power Dissipation. Includes 1V Threshold Voltage and 2.11nF Input Capacitance. RoHS Compliant.
Sign in to ask questions about the Vishay SI4204DY-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI4204DY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 19.8A |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 13ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.11nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.25W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.6mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4204DY-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
