Surface mount N-channel MOSFET with 30V drain-source voltage and 6.5A continuous drain current. Features 35.5mΩ drain-source resistance at 10V gate-source voltage and 2.7W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Includes 2 N-channel FETs per device, with input capacitance of 445pF and fast switching times including 8ns fall time.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4210DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 35.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 445pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 35.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 1ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4210DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4210DY-T1-GE3 to view detailed technical specifications.
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