Surface mount N-channel MOSFET with 30V drain-source voltage and 6.5A continuous drain current. Features 35.5mΩ drain-source resistance at 10V gate-source voltage and 2.7W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Includes 2 N-channel FETs per device, with input capacitance of 445pF and fast switching times including 8ns fall time.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4210DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
6.5A
Drain to Source Resistance
35.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
445pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
35.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
1ns
Turn-On Delay Time
12ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI4210DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4210DY-T1-GE3 to view detailed technical specifications.
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