Surface mount N-channel MOSFET with 30V drain-source voltage and 6.5A continuous drain current. Features 35.5mΩ drain-source resistance at 10V gate-source voltage and 2.7W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Includes 2 N-channel FETs per device, with input capacitance of 445pF and fast switching times including 8ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI4210DY-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 35.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 445pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 35.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 1ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4210DY-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
