N-Channel MOSFET featuring 40V drain-source voltage and 7A continuous drain current. This surface-mount component offers a low 27mΩ drain-to-source resistance and 2.9W maximum power dissipation. With a 2.5V threshold voltage and fast switching times including a 7ns fall time, it is suitable for demanding applications. Operating across a -55°C to 150°C temperature range, this RoHS compliant device is supplied in tape and reel packaging.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay Si4286DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
7A
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
40V
Fall Time
7ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
375pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.9W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
32.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
10ns
Turn-On Delay Time
9ns
Weight
0.019048oz
Compliance
RoHS
Compliant
Datasheet
Vishay Si4286DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si4286DY-T1-GE3 to view detailed technical specifications.
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