N-Channel MOSFET featuring 40V drain-source voltage and 7A continuous drain current. This surface-mount component offers a low 27mΩ drain-to-source resistance and 2.9W maximum power dissipation. With a 2.5V threshold voltage and fast switching times including a 7ns fall time, it is suitable for demanding applications. Operating across a -55°C to 150°C temperature range, this RoHS compliant device is supplied in tape and reel packaging.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay Si4286DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 375pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.9W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 32.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.019048oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay Si4286DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si4286DY-T1-GE3 to view detailed technical specifications.
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