N-channel MOSFET with 30V drain-source breakdown voltage and 24A continuous drain current. Features low 3.2mΩ drain-source on-resistance and 7.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-pin SOIC N surface-mount package, supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power3.5W
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Technical Specifications
Vishay SI4324DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.2mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.061inch |
| Input Capacitance | 3.51nF |
| Lead Free | Lead Free |
| Length | 0.196inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.5W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 30ns |
| Width | 0.157inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4324DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4324DY-T1-E3 to view detailed technical specifications.
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