The SI4334DY-T1-GE3 is a N-CHANNEL power MOSFET from Vishay, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.1W and is RoHS compliant. The device is packaged in tape and reel quantities of 2500 and has a drain to source voltage of 30V and a gate to source voltage of 12V.
Resistance0.0135R
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4334DY-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 11.3A |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Resistance | 0.0135R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4334DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4334DY-T1-GE3 to view detailed technical specifications.
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