N-channel MOSFET featuring 30V drain-source voltage and 5.9A continuous drain current. Offers a low 23mΩ drain-source on-resistance at 10V gate-source voltage. This surface-mount component, housed in a SOIC package, operates within a -55°C to 150°C temperature range with a maximum power dissipation of 1.31W. Key switching characteristics include a 9ns turn-on delay and 11ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI4346DY-T1-E3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI4346DY-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 23mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.31W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.31W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4346DY-T1-E3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
