The SI4364DY-T1-GE3 is a N-CHANNEL MOSFET with a continuous drain current of 13A and a drain to source voltage of 30V. It has a drain to source resistance of 4.5mR and a gate to source voltage of 16V. The device is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is available in tape and reel packaging with a quantity of 2500 units. The SI4364DY-T1-GE3 is RoHS compliant and suitable for use in power management applications.
Resistance0.0045R
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4364DY-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Resistance | 0.0045R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4364DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4364DY-T1-GE3 to view detailed technical specifications.
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