N-channel MOSFET with 30V drain-source voltage and 11A continuous drain current. Features low 7mΩ drain-source on-resistance and operates within a -55°C to 150°C temperature range. Surface mountable in an 8-SOIC package, this component offers fast switching with turn-on delay of 12ns and fall time of 9ns. Rated for 1.47W maximum power dissipation and supplied on tape and reel.
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Vishay SI4386DY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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