N-Channel MOSFET, TrenchFET® series, designed for fast switching applications. Features a 30V Drain-to-Source Voltage (Vdss) and a low 7mΩ Drain-to-Source Resistance (Rds On Max). Continuous Drain Current (ID) up to 11A, with a 2V Threshold Voltage (Vgs(th)). Offers rapid switching with a 9ns Fall Time and 12ns Turn-On Delay Time. Packaged in SO surface mount format, supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4386DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4386DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4386DY-T1-GE3 to view detailed technical specifications.
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