N-channel MOSFET with 20V drain-source voltage (Vdss) and 21A continuous drain current (ID). Features low 4.5mR drain-source on-resistance (Rds On Max) and 1V threshold voltage. Designed for surface mounting in an 8-SOIC package, this component offers fast switching with a 42ns turn-on delay and 26ns fall time. Operating temperature range from -55°C to 150°C, with 1.6W max power dissipation.
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Vishay SI4408DY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 4.5MR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.01787oz |
| Width | 4mm |
| RoHS | Compliant |
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