P-channel enhancement mode power MOSFET in an 8-pin SOIC N package. Features a maximum drain-source voltage of 150V and a continuous drain current of 0.9A. Offers a low drain-source on-resistance of 1200 mOhm at 10V. Typical gate charge is 7.7 nC at 10V, with input capacitance of 332 pF at 50V. Maximum power dissipation is 2200 mW, operating from -55°C to 150°C.
PackageSOIC N
MountingSurface Mount
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Technical Specifications
Vishay SI4409DY-T1-GE3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOIC N
Package Description
Small Outline IC Narrow Body
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5(Max)
Package Width (mm)
4(Max)
Package Height (mm)
1.55(Max)
Seated Plane Height (mm)
1.75(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
150V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.9A
Maximum Drain Source Resistance
1200@10VmOhm
Typical Gate Charge @ Vgs
7.7@10V|4.8@6VnC
Typical Gate Charge @ 10V
7.7nC
Typical Input Capacitance @ Vds
332@50VpF
Maximum Power Dissipation
2200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SI4409DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4409DY-T1-GE3 to view detailed technical specifications.
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