P-channel enhancement mode power MOSFET in an 8-pin SOIC N package. Features a maximum drain-source voltage of 150V and a continuous drain current of 0.9A. Offers a low drain-source on-resistance of 1200 mOhm at 10V. Typical gate charge is 7.7 nC at 10V, with input capacitance of 332 pF at 50V. Maximum power dissipation is 2200 mW, operating from -55°C to 150°C.
PackageSOIC N
MountingSurface Mount
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Technical Specifications
Vishay SI4409DY-T1-GE3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOIC N |
| Package Description | Small Outline IC Narrow Body |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4(Max) |
| Package Height (mm) | 1.55(Max) |
| Seated Plane Height (mm) | 1.75(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 150V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.9A |
| Maximum Drain Source Resistance | 1200@10VmOhm |
| Typical Gate Charge @ Vgs | 7.7@10V|4.8@6VnC |
| Typical Gate Charge @ 10V | 7.7nC |
| Typical Input Capacitance @ Vds | 332@50VpF |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SI4409DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4409DY-T1-GE3 to view detailed technical specifications.
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