Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Vishay SI4410DY-REVA-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 19ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
