P-channel MOSFET, 20V drain-source voltage, 10A continuous drain current, and 7.5mΩ drain-source resistance. Features surface mount SO package with 1.55mm height, 5mm length, and 4mm width. Operates from -55°C to 150°C with 1.5W maximum power dissipation. Includes 75ns turn-on delay, 165ns fall time, and 460ns turn-off delay. RoHS compliant.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4423DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
10A
Drain to Source Resistance
7.5mR
Drain to Source Voltage (Vdss)
20V
Fall Time
165ns
Gate to Source Voltage (Vgs)
8V
Height
1.55mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
7.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
460ns
Turn-On Delay Time
75ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4423DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4423DY-T1-GE3 to view detailed technical specifications.
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