P-channel MOSFET transistor for surface mount applications. Features a -30V drain-source voltage and 8.8A continuous drain current. Offers a low 12mΩ drain-source on-resistance. Operates within a -55°C to 150°C temperature range with 1.5W maximum power dissipation. Packaged in an 8-pin SOIC case, supplied on tape and reel.
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Vishay SI4425BDY-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 12mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | -400mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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