P-channel, surface-mount MOSFET for general-purpose small signal applications. Features a continuous drain current of 13A and a drain-to-source voltage of -30V. Offers a low drain-source on-resistance of 9.8mΩ, with turn-on delay time of 12ns and fall time of 9ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 5.7W. Packaged in a 5mm x 4mm x 1.5mm SOIC package, it is halogen-free and RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4425DDY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13A
Drain to Source Resistance
9.8mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
9.8MR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
2.61nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.7W
Mount
Surface Mount
Nominal Vgs
-1.2V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
9.8mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.2V
Turn-Off Delay Time
42ns
Turn-On Delay Time
12ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4425DDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4425DDY-T1-GE3 to view detailed technical specifications.
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