N-channel MOSFET transistor, surface mount, in an 8-pin SOIC package. Features 20V drain-source breakdown voltage and 6.5A continuous drain current. Offers a maximum drain-source on-resistance of 25mR. Operates within a temperature range of -55°C to 150°C with 1.5W maximum power dissipation. Includes 40ns turn-on delay and 90ns turn-off delay.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4426DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
6.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
25mR
Fall Time
40ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
25mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
90ns
Turn-On Delay Time
40ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4426DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4426DY-T1-E3 to view detailed technical specifications.
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