P-channel, silicon, Metal-oxide Semiconductor FET designed for small signal applications. Features a maximum drain current of 5.7A and a drain-source voltage rating of 30V. This single-element JFET is housed in a ROHS compliant SOP-8 package with 8 terminals arranged in a dual configuration. Operates up to a maximum temperature of 150°C.
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Technical Specifications
Vishay SI4431BDY-T1-E3 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
8
Terminal Position
DUAL
Pin Count
8
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Vishay SI4431BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4431BDY-T1-E3 to view detailed technical specifications.
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