P-channel JFET with 7A continuous drain current and -30V drain-source voltage. Features low 32mR drain-source on-resistance, 1.006nF input capacitance, and 38ns turn-on delay. Operates from -55°C to 150°C with 4.2W max power dissipation. Surface mountable in an SOIC package, this silicon MOSFET is HALOGEN FREE and ROHS COMPLIANT.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4431CDY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7A
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
32MR
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.006nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.2W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
32mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2.5V
Turn-Off Delay Time
22ns
Turn-On Delay Time
38ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4431CDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4431CDY-T1-GE3 to view detailed technical specifications.
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