N-channel MOSFET with 250V Drain-Source Voltage (Vdss) and 2.1A Continuous Drain Current (ID). Features a low Drain-Source On Resistance (Rds On) of 155mR. Operates with a Gate-Source Voltage (Vgs) up to 20V and offers fast switching speeds with a 16ns Turn-On Delay Time and 19ns Fall Time. This surface-mount component is housed in an 8-SOIC package, rated for a maximum power dissipation of 1.56W, and operates within a temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4434DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
2.1A
Drain to Source Resistance
155mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
155mR
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
155mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
47ns
Turn-On Delay Time
16ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4434DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4434DY-T1-E3 to view detailed technical specifications.
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