N-channel MOSFET, 250V Drain-Source Voltage (Vdss), 2.1A Continuous Drain Current (ID). Features 155mΩ Drain to Source Resistance (Rds On Max) and 1.56W Max Power Dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in an 8-SOIC package, this component offers fast switching with 16ns turn-on and 19ns fall times. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI4434DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
2.1A
Drain to Source Resistance
155mR
Drain to Source Voltage (Vdss)
250V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
155mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
47ns
Turn-On Delay Time
16ns
Weight
0.006596oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI4434DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4434DY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.