P-channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and 7A Continuous Drain Current (ID). Offers a low Drain-to-Source On-Resistance (Rds On) of 20mR. Operates within a temperature range of -55°C to 150°C. Packaged in an 8-pin SOIC surface mount package.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4435BDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
7A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
30V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
20mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
110ns
Turn-On Delay Time
10ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4435BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4435BDY-T1-E3 to view detailed technical specifications.
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