P-channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and 7A Continuous Drain Current (ID). Offers a low Drain-to-Source On-Resistance (Rds On) of 20mR. Operates within a temperature range of -55°C to 150°C. Packaged in an 8-pin SOIC surface mount package.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4435BDY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4435BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4435BDY-T1-E3 to view detailed technical specifications.
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