P-Channel MOSFET, 30V Drain-Source Voltage, 8.1A Continuous Drain Current, and 24mΩ Max Drain-Source On-Resistance. Features a 1.35nF Input Capacitance, 16ns Fall Time, 40ns Turn-Off Delay, and 42ns Turn-On Delay. This surface-mount component operates from -55°C to 150°C with a 2.5W Power Dissipation.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4435DDY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 24mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4435DDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4435DDY-T1-E3 to view detailed technical specifications.
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