P-Channel MOSFET, 30V Drain-Source Voltage, 8.1A Continuous Drain Current, and 24mΩ Max Drain-Source On-Resistance. Features a 1.35nF Input Capacitance, 16ns Fall Time, 40ns Turn-Off Delay, and 42ns Turn-On Delay. This surface-mount component operates from -55°C to 150°C with a 2.5W Power Dissipation.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4435DDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8.1A
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
24mR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.35nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
24mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
40ns
Turn-On Delay Time
42ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4435DDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4435DDY-T1-E3 to view detailed technical specifications.
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