
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI4435DY-REVA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI4435DY-REVA technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Package Quantity | 100 |
| Polarity | P-CHANNEL |
| RoHS Compliant | No |
| Series | SI4 |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.006596oz |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay SI4435DY-REVA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.