Vishay
SI4435DY-REVA
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
PackageSO
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4435DY-REVA technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Number of Channels
1
Package Quantity
100
Polarity
P-CHANNEL
RoHS Compliant
No
Series
SI4
Turn-Off Delay Time
75ns
Turn-On Delay Time
16ns
Weight
0.006596oz
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI4435DY-REVA Datasheet
Download the complete datasheet for Vishay SI4435DY-REVA to view detailed technical specifications.
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