N-channel MOSFET, 60V drain-source voltage, 8A continuous drain current, and 36mΩ maximum drain-source on-resistance. Features a 1.5V threshold voltage and 1.1nF input capacitance. Operates within a -55°C to 150°C temperature range with 2.5W maximum power dissipation. Packaged in an 8-pin SOIC surface-mount case, this RoHS compliant component is supplied on tape and reel.
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Vishay SI4436DY-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 36mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 36mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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