N-channel MOSFET, 60V drain-source voltage, 6.1A continuous drain current, and 36mΩ drain-source on-resistance. Features a 2.5V threshold voltage, 1.1nF input capacitance, and 10ns turn-on delay. Packaged in an 8-pin SOIC surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2.5W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4436DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
6.1A
Drain to Source Resistance
36mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
36MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
36mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4436DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4436DY-T1-GE3 to view detailed technical specifications.
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