N-channel MOSFET, 30V drain-source voltage, 15A continuous drain current, and 4.5mR drain-to-source resistance. Features a 4mm width, 5mm length, and 1.55mm height in an 8-pin SOIC package for surface mounting. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 1.6W. Includes fast switching characteristics with turn-on delay of 17ns and fall time of 47ns.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4442DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
15A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
47ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
125ns
Turn-On Delay Time
17ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4442DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4442DY-T1-GE3 to view detailed technical specifications.
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