P-channel MOSFET, 40V drain-source voltage, 3.3A continuous drain current, and 54mΩ maximum drain-source on-resistance. Features a -2.2V threshold voltage and 16V gate-source voltage rating. This surface-mount component is housed in an 8-pin SOIC package with a maximum power dissipation of 1.1W. Operates across a -55°C to 150°C temperature range, with fast switching times including 8ns turn-on and 12ns fall times.
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Vishay SI4447DY-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Resistance | 54mR |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 54mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.5mm |
| Input Capacitance | 805pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 54mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2.2V |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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