P-channel MOSFET, 40V drain-source voltage, 3.3A continuous drain current, and 54mΩ maximum drain-source on-resistance. Features a -2.2V threshold voltage and 16V gate-source voltage rating. This surface-mount component is housed in an 8-pin SOIC package with a maximum power dissipation of 1.1W. Operates across a -55°C to 150°C temperature range, with fast switching times including 8ns turn-on and 12ns fall times.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI4447DY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.3A
Drain to Source Resistance
54mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
54mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
16V
Height
1.5mm
Input Capacitance
805pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
54mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2.2V
Turn-Off Delay Time
74ns
Turn-On Delay Time
8ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4447DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4447DY-T1-E3 to view detailed technical specifications.
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