Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Vishay SI4450DY technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Package Quantity | 100 |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | SI4 |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
