The SI4455DY-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.1W and is packaged in a SO surface mount package. The device is RoHS compliant and has a continuous drain current of 2A. It also features a drain to source resistance of 295mR and a drain to source voltage of 150V.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4455DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 295mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 34ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.19nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 295mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.006596oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4455DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4455DY-T1-GE3 to view detailed technical specifications.
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