N-channel MOSFET, 40V drain-source voltage, 23A continuous drain current, and 3.8mΩ maximum drain-source on-resistance. Features include 8ns fall time, 21ns turn-on delay, and 55ns turn-off delay. This surface-mount component operates within a -55°C to 150°C temperature range and offers 7.8W maximum power dissipation. Packaged in an 8-pin SOIC N for tape and reel distribution.
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Vishay SI4456DY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 3.8mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 5.67nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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