N-channel MOSFET with 200V drain-source breakdown voltage and 1.15A continuous drain current. Features a low 17mΩ drain-source on-resistance and 480mΩ Rds On Max. Operates across a -55°C to 150°C temperature range, with a maximum power dissipation of 1.3W. This surface-mount device is packaged in an 8-pin SOIC N, supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Vishay SI4462DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
1.15A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
17mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
0.061inch
Lead Free
Lead Free
Length
0.196inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
480mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
Width
0.157inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI4462DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4462DY-T1-E3 to view detailed technical specifications.
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