P-channel JFET, surface mount, SO package. Features 9A continuous drain current and -20V drain-to-source breakdown voltage. Offers 14mΩ drain-to-source resistance and 1.5W power dissipation. Operates from -55°C to 150°C with a gate-to-source voltage of 12V. Includes fast switching characteristics with turn-on delay of 35ns and fall time of 45ns.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4463DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Series | SI4 |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4463DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4463DY-T1-E3 to view detailed technical specifications.
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