N-channel MOSFET for general-purpose small signal applications. Features 200V drain-to-source breakdown voltage and 1.7A continuous drain current. Offers a low 240mΩ maximum drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C. Packaged in an 8-pin SO (SOP) surface-mount package. RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4464DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
1.7A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
240mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
240mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4464DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4464DY-T1-E3 to view detailed technical specifications.
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