N-channel MOSFET, surface mount, in a SOP-8 package. Features 200V drain-source voltage, 1.7A continuous drain current, and 240mΩ drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 1.5W. Includes 10ns turn-on delay and 15ns fall time. Halogen-free and RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4464DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
1.7A
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
240mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
240mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4464DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4464DY-T1-GE3 to view detailed technical specifications.
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