Vishay
SI4465DY-T1-E3
Power Field-Effect Transistor, 14A I(D), 8V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
Power Field-Effect Transistor, 14A I(D), 8V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
PackageSO
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4465DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 190ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Series | SI4 |
| Turn-Off Delay Time | 380ns |
| Turn-On Delay Time | 45ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4465DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4465DY-T1-E3 to view detailed technical specifications.
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