The SI4470EY is a single N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.85W and a continuous drain current of 9A. The device is packaged in a SOIC package with dimensions of 5mm in length, 4mm in width, and 1.55mm in height. The MOSFET has a drain to source voltage rating of 60V and a gate to source voltage rating of 20V.
Vishay SI4470EY technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.85W |
| Number of Channels | 1 |
| Package Quantity | 100 |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.85W |
| RoHS Compliant | No |
| Series | SI4 |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.002998oz |
| Width | 4mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
