P-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 19.2A continuous drain current. This surface-mount component offers a low 8.8mOhm drain-source resistance at 10V Vgs and is housed in an 8-pin SOIC N package with gull-wing leads. Key specifications include a typical gate charge of 90nC at 10V and an input capacitance of 3900pF at 15V. Operating temperature range is -55°C to 150°C.
PackageSOIC N
MountingSurface Mount
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Technical Specifications
Vishay Si4483ADY technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOIC N |
| Package Description | Small Outline IC Narrow Body |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4(Max) |
| Package Height (mm) | 1.55(Max) |
| Seated Plane Height (mm) | 1.75(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±25V |
| Maximum Continuous Drain Current | 19.2A |
| Maximum Drain Source Resistance | 8.8@10VmOhm |
| Typical Gate Charge @ Vgs | 90@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 90nC |
| Typical Input Capacitance @ Vds | 3900@15VpF |
| Maximum Power Dissipation | 2900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si4483ADY Datasheet
Download the complete datasheet for Vishay Si4483ADY to view detailed technical specifications.
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