P-channel MOSFET, 30V drain-source breakdown voltage, 10A continuous drain current, and 8.5mΩ maximum drain-source on-resistance at 10V. This surface-mount component features a 3V threshold voltage and a maximum power dissipation of 1.5W. Operating across a temperature range of -55°C to 150°C, it is packaged in SOIC format on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4483EDY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
8.5mR
Fall Time
20000ns
Gate to Source Voltage (Vgs)
25V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
8.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
42000ns
Turn-On Delay Time
10000ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI4483EDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4483EDY-T1-E3 to view detailed technical specifications.
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