P-channel MOSFET, 30V drain-source breakdown voltage, 10A continuous drain current, and 8.5mΩ maximum drain-source on-resistance at 10V. This surface-mount component features a 3V threshold voltage and a maximum power dissipation of 1.5W. Operating across a temperature range of -55°C to 150°C, it is packaged in SOIC format on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4483EDY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 8.5mR |
| Fall Time | 20000ns |
| Gate to Source Voltage (Vgs) | 25V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 42000ns |
| Turn-On Delay Time | 10000ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4483EDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4483EDY-T1-E3 to view detailed technical specifications.
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