The SI4484EY-T1-GE3 is a single N-CHANNEL MOSFET from Vishay, featuring a maximum operating temperature range of -55°C to 175°C. It has a maximum power dissipation of 1.8W and a continuous drain current of 4.8A. The device is packaged in a surface mount SO package and is RoHS compliant. The MOSFET has a drain to source resistance of 34mR and a threshold voltage of 2V.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI4484EY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 34mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4484EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4484EY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
