N-channel MOSFET, 100V drain-source voltage, 7.9A continuous drain current, and 25mΩ drain-source resistance. Features a 2V gate-source threshold voltage and 20V maximum gate-source voltage. Operates across a -55°C to 175°C temperature range with a 1.8W maximum power dissipation. Packaged in an 8-pin SOIC for surface mounting, delivered on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4486EY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.9A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4486EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4486EY-T1-GE3 to view detailed technical specifications.
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