N-channel MOSFET, 100V drain-source voltage, 7.9A continuous drain current, and 25mΩ drain-source resistance. Features a 2V gate-source threshold voltage and 20V maximum gate-source voltage. Operates across a -55°C to 175°C temperature range with a 1.8W maximum power dissipation. Packaged in an 8-pin SOIC for surface mounting, delivered on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4486EY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
7.9A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
100V
Fall Time
26ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
46ns
Turn-On Delay Time
20ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI4486EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4486EY-T1-GE3 to view detailed technical specifications.
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