N-channel MOSFET, surface mount, SOP-8 package, offering 200V drain-source voltage and 2.85A continuous drain current. Features low 80mΩ drain-source on-resistance and 1.56W power dissipation. Operates across a -55°C to 150°C temperature range with fast switching times, including a 14ns turn-on delay. RoHS compliant for general-purpose small-signal applications.
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Vishay SI4490DY-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.85A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 80mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.01787oz |
| Width | 4mm |
| RoHS | Compliant |
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