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Technical Specifications
Vishay SI4491EDY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
17.3A
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
25V
Input Capacitance
4.62nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.9W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
6.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Compliance
RoHS
Compliant
Datasheet
Vishay SI4491EDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4491EDY-T1-GE3 to view detailed technical specifications.
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