The SI4501ADY-T1 is a dual N-channel/P-channel MOSFET from Vishay, featuring a continuous drain current of 8.8A and a drain to source resistance of 42mR. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.3W. The device is packaged in a SOIC package and is available in tape and reel packaging with 2500 units per package.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| RoHS Compliant | No |
| Series | SI4 |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Not Compliant |
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